LPCVD SYSTE
Sunredveichi is committed to providing you with High-Quality Semiconductor Processing Equipment
Main Parameters
● Applicable Wafer Size: 4-8 inches (with compatibility design)
● Operating Temperature Range: 300-950℃
● Temperature Control Accuracy: ±0.5℃
● Working pressure: 100-300 mtorr
● Ultimate pressure: 3 mtorr
● Leak rate: 1 mtorr/min
● Deposition rate: 1-15 nm/min (depending on materials and process conditions)
● Thin-film uniformity: Intra-wafer/inter-wafer/inter-batch uniformity within ±1%
● Gas system: The reaction gases (such as SiH4, DCS, NH3, N2O, etc.) are controlled by high-precision mass flow controllers (MFCs), and an exhaust gas treatment system(Scrubber)is integrated
Core Technological Advantages
High-quality Thin Films
● The low-pressure environment (100-300 mtorr) reduces gas-phase reactions, enhancing the compactness and uniformity of the thin films (the thickness uniformity can reach within±1%).
Excellent Step Coverage Ability
● It is suitable for uniform coating on structures with high aspect ratios (such as trenches and holes), avoiding edge effects.
Wide Material Adaptability
● It supports the deposition of various materials (such as silicon wafers, glass, ceramics, metal substrates, etc.), and the process parameters can be flexibly adjusted.
Full Automation Control
● SECS/GEM Integration: Equipped with a standard SECS/GEM communication interface, it can seamlessly connect to the factory automation system, enabling real-time monitoring of equipment status, remote parameter adjustment, and efficient exchange of production data, thus providing a solid foundation for intelligent manufacturing.