LPCVD SYSTE
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  • LPCVD SYSTE

LPCVD SYSTE

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It is mainly used to deposit high-quality thin films on the wafer surface through chemical reactionsin a low-pressure environment, it can be used in processes such as depositina polvsilicon (Poly - Si) silicon nitride (Si3N4) thin films, silicon oxide (Si02) thin films, BPSG thin films, LTO thin films, HTo thinfilms,SlPOS thin films, BSG thin films, and PSG thin films.

Main Parameters

● Applicable Wafer Size: 4-8 inches (with compatibility design)

● Operating Temperature Range: 300-950℃

● Temperature Control Accuracy: ±0.5℃

● Working pressure: 100-300 mtorr

● Ultimate pressure: 3 mtorr

● Leak rate: 1 mtorr/min

● Deposition rate: 1-15 nm/min (depending on materials and process conditions)

● Thin-film uniformity:  Intra-wafer/inter-wafer/inter-batch uniformity within ±1%

● Gas system: The reaction gases (such as SiH4, DCS, NH3, N2O, etc.) are controlled by high-precision mass flow controllers (MFCs), and an exhaust gas treatment system(Scrubber)is integrated

 

Core Technological Advantages

High-quality Thin Films

● The low-pressure environment (100-300 mtorr) reduces gas-phase reactions, enhancing the compactness and uniformity of the thin films (the thickness uniformity can reach within±1%).

Excellent Step Coverage Ability

● It is suitable for uniform coating on structures with high aspect ratios (such as trenches and holes), avoiding edge effects.

Wide Material Adaptability

● It supports the deposition of various materials (such as silicon wafers, glass, ceramics, metal substrates, etc.), and the process parameters can be flexibly adjusted.

Full Automation Control

● SECS/GEM Integration: Equipped with a standard SECS/GEM communication interface, it can seamlessly connect to the factory automation system, enabling real-time monitoring of equipment status, remote parameter adjustment, and efficient exchange of production data, thus providing a solid foundation for intelligent manufacturing.

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