Liquid Phase Epitaxial Furnace
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  • Liquid Phase Epitaxial Furnace

Liquid Phase Epitaxial Furnace

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LPE equipment (Liquid Phase Epitaxial) is a device for growing thin film crystals inliquid phase, mainly used for the liquid phase epitaxial growth of compound epitaxial films, the growth of YlG、RlG magneto-optical ferrite single crystal materials, etc. lt is a key process equipment in the development and production of optoelectronic devices.

Main Parameters

● Temperature: 800-1250 ℃

● Temperature zones: 5 zones

● Wafer size: 2-6 inches

● Temperature control accuracy: ±0.1℃

● Constant temperature zone: >180mm

● The temperature difference between the upper and lower points in the constant temperature zone is ±0.1℃

● Crucible speed: 5-90rpm forward and reverse control, accuracy ±0.5rpm

● Seed crystal rod speed:10-1000rpm forward and reverse control, accuracy ±0.5rpm

 

Main Features

● High degree of automation, the entire process is automatically completed by industrial computer control.

● The coating program has functions such as fixed distance epitaxy and multiple epitaxy.

● Equipped with industrial computer local monitoring and control, as well as remote monitoring and control.

● Equipped with control box online UPS function and power outage protection program.

● Equipped with multi-point temperature compensation function.

● Equipped with various fault alarm and interlock functions.

● Equipped with manual/automatic and autonomous switching functions.

● The software and hardware have axial temperature calibration and detection functions.

● The device supports GEM/SECS/MES control integration with full automation functions.

● Reserve the vacuum function.

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